- silicon dopant
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English-Ukrainian dictionary of microelectronics. 2013.
silicon dopant
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Silicon on sapphire — (SOS) is a hetero epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of… … Wikipedia
Dopant Activation — is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host.[1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common… … Wikipedia
Dopant — Dop ant (d[=o]p ant), n. a foreign substance added to a material to alter its properties; a process used. e.g., in making semiconductors from pure silicon in the manufacture of semiconductor chips and integrated circuits. [PJC] … The Collaborative International Dictionary of English
Dopant — This article is about elemental impurities. For the fictional characters in Kamen Rider W, see Dopant (Kamen Rider). A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations)… … Wikipedia
dopant — /doh peuhnt/, n. Electronics. an impurity added intentionally in a very small, controlled amount to a pure semiconductor to change its electrical properties: Arsenic is a dopant for silicon. [1960 65; DOPE + ANT] * * * Any impurity added to a… … Universalium
Silicon carbide — Chembox new Name = Silicon carbide ImageFile = Silicon carbide 3D balls.png ImageSize = 140px ImageName = Ball and stick model of part of a crystal of SiC ImageFile1 = silicon carbide detail.jpg ImageSize1 = 140px OtherNames = Section1 = Chembox… … Wikipedia
silicon — /sil i keuhn, kon /, n. Chem. a nonmetallic element, having amorphous and crystalline forms, occurring in a combined state in minerals and rocks and constituting more than one fourth of the earth s crust: used in steelmaking, alloys, etc. Symbol … Universalium
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
National Ignition Facility — NIF s basic layout. The laser pulse is generated in the room just right of center, and is sent into the beamlines (blue) on either side. After several passes through the beamlines the light is sent into the switchyard (red) where it is aimed into … Wikipedia
